RPCVD Growth of Epitaxial Si-Ge-Sn Alloys for Optoelectronics Applications
abstract: Ge1-xSnx and SiyGe1-x-ySnx materials are being researched intensively for applications in infra-red optoelectronic devices. Due to their direct band gap these materials may in-fact be the enabling factor in the commercial realization of silicon photonics/group IV photonics and the integrat...
| Other Authors: | |
|---|---|
| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2018
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2286/R.I.49406 |