Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

abstract: A modeling platform for predicting total ionizing dose (TID) and dose rate response of commercial commercial-off-the-shelf (COTS) linear bipolar circuits and technologies is introduced. Tasks associated with the modeling platform involve the development of model to predict the excess curre...

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Bibliographic Details
Other Authors: Tolleson, Blayne S. (Author)
Format: Dissertation
Language:English
Published: 2017
Subjects:
Electrical engineering
base current
current gain
interface traps
lateral PNP bipolar junction transistor
surface recombination velocity
total ionizing dose
Online Access:http://hdl.handle.net/2286/R.I.46303

Internet

http://hdl.handle.net/2286/R.I.46303

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