The Role of the Collisional Broadening of the States on the Low-Field Mobility in Silicon Inversion Layers

The Role of the Collisional Broadening of the States on the Low-Field Mobility in Silicon Inversion Layers

abstract: Scaling of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) towards shorter channel lengths, has lead to an increasing importance of quantum effects on the device performance. Until now, a semi-classical model based on Monte Carlo method for instance, has been sufficient to a...

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Bibliographic Details
Other Authors: Jayaram Thulasingam, Gokula Kannan (Author)
Format: Doctoral Thesis
Language:English
Published: 2017
Subjects:
Electrical engineering
Electronic Transport,
Semiconductor Device Modeling and Simulation
Semiconductor Device Physics,
Semiconductors
Online Access:http://hdl.handle.net/2286/R.I.46289

Internet

http://hdl.handle.net/2286/R.I.46289

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