Simulation of High Temperature InGaN Photovoltaic Devices
abstract: In recent years, there has been increased interest in the Indium Gallium Nitride (InGaN) material system for photovoltaic (PV) applications. The InGaN alloy system has demonstrated high performance for high frequency power devices, as well as for optical light emitters. This material syst...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2017
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| Online Access: | http://hdl.handle.net/2286/R.I.46212 |