Mobility Modeling of Gallium Nitride Nanowires

Mobility Modeling of Gallium Nitride Nanowires

abstract: Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the...

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Bibliographic Details
Other Authors: Kumar, Viswanathan Naveen (Author)
Format: Dissertation
Language:English
Published: 2017
Subjects:
Electrical engineering
Gallium Nitride
Mobility
Monte Carlo
Nanowires
Semiconductor Device Modeling
Online Access:http://hdl.handle.net/2286/R.I.46185

Internet

http://hdl.handle.net/2286/R.I.46185

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