High-Modulation-Speed LEDs Based on III-Nitride

High-Modulation-Speed LEDs Based on III-Nitride

abstract: III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to...

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Bibliographic Details
Other Authors:	Chen, Hong (Author)
Format:	Dissertation
Language:	English
Published:	2016
Subjects:	Optics Plasmonics Purcell effect Rate equation
Online Access:	http://hdl.handle.net/2286/R.I.38556

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