High-Modulation-Speed LEDs Based on III-Nitride
abstract: III-nitride InGaN light-emitting diodes (LEDs) enable wide range of applications in solid-state lighting, full-color displays, and high-speed visible-light communication. Conventional InGaN quantum well LEDs grown on polar c-plane substrate suffer from quantum confined Stark effect due to...
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| Format: | Dissertation |
| Language: | English |
| Published: |
2016
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| Online Access: | http://hdl.handle.net/2286/R.I.38556 |