The Optical and Electronic Properties of Ge1-ySny and Ge1-x-ySixSny Materials and Devices for Silicon Integrated Optoelectronics

The Optical and Electronic Properties of Ge1-ySny and Ge1-x-ySixSny Materials and Devices for Silicon Integrated Optoelectronics

abstract: Group-IV semiconductor alloys are of interest for Si-integrated optoelectronic applications due to the band gap tunability and enhanced optical capabilities that can be achieved through compositional tuning. This work advances the field by presenting a systematic study of the optical and e...

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Bibliographic Details
Other Authors: Gallagher, James Dennis (Author)
Format: Doctoral Thesis
Language:English
Published: 2015
Subjects:
Physics
alloys
devices
electroluminescence
photoluminescence
semiconductors
Online Access:http://hdl.handle.net/2286/R.I.36418

Internet

http://hdl.handle.net/2286/R.I.36418

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