Multilevel Resistance Programming in Conductive Bridge Resistive Memory

Multilevel Resistance Programming in Conductive Bridge Resistive Memory

abstract: This work focuses on the existence of multiple resistance states in a type of emerging non-volatile resistive memory device known commonly as Programmable Metallization Cell (PMC) or Conductive Bridge Random Access Memory (CBRAM), which can be important for applications such as multi-bit m...

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Bibliographic Details
Other Authors: Mahalanabis, Debayan (Author)
Format: Doctoral Thesis
Language:English
Published: 2015
Subjects:
Electrical engineering
Nanotechnology
CBRAM
Compact Model
Neuromorphic Computing
Non-volatile Memory
Resistive Memory
STDP
Online Access:http://hdl.handle.net/2286/R.I.36417

Internet

http://hdl.handle.net/2286/R.I.36417

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