Epitaxial Growth of High Quality InAs/GaAsSb Quantum Dots for Solar Cells
abstract: The development of high efficiency III-V solar cells is needed to meet the demands of a promising renewable energy source. Intermediate band solar cells (IBSCs) using semiconductor quantum dots (QDs) have been proposed to exceed the Shockley-Queisser efficiency limit [1]. The introduction...
| Other Authors: | |
|---|---|
| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2286/R.I.35962 |