Retention of Programmable Metallization Cells During Ionizing Radiation Exposure

Retention of Programmable Metallization Cells During Ionizing Radiation Exposure

abstract: Non-volatile memory (NVM) has become a staple in the everyday life of consumers. NVM manifests inside cell phones, laptops, and most recently, wearable tech such as smart watches. NAND Flash has been an excellent solution to conditions requiring fast, compact NVM. Current technology nodes...

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Bibliographic Details
Other Authors: Taggart, Jennifer Lynn (Author)
Format: Dissertation
Language:English
Published: 2015
Subjects:
Electrical engineering
Materials Science
Flash
Non-volatile Memory
Programmable Metallization Cell
Radiation Environment
Resistive Memory
Solid-state
Online Access:http://hdl.handle.net/2286/R.I.29870

Internet

http://hdl.handle.net/2286/R.I.29870

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