Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions

Defect Creation in InGaAs/GaAs Multiple Quantum Wells: Correlation of Crystalline and Optical Properties with Epitaxial Growth Conditions

abstract: Multiple quantum well (MQW) structures have been employed in a variety of solid state devices. The InGaAs/GaAs material system is of special interest for many optoelectronic applications. This study examines epitaxial growth and defect creation in InGaAs/GaAs MQWs at its initial stage. Cor...

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Bibliographic Details
Other Authors: Karow, Matthias (Author)
Format: Dissertation
Language:English
Published: 2014
Subjects:
Electrical engineering
Physics
Materials Science
Carrier Localization
Excitation Dependent Photoluminescence
High Resolution X-ray Diffraction
InGaAs
Molecular Beam Epitaxy
Multiple Quantum Wells
Online Access:http://hdl.handle.net/2286/R.I.25852

Internet

http://hdl.handle.net/2286/R.I.25852

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