Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN

Interface Electronic State Characterization of Plasma Enhanced Atomic Layer Deposited Dielectrics on GaN

abstract: In this dissertation, the interface chemistry and electronic structure of plasma-enhanced atomic layer deposited (PEALD) dielectrics on GaN are investigated with x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). Three interrelated issues are discussed in this study: (1) PEALD...

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Bibliographic Details
Other Authors: Yang, Jialing (Author)
Format: Doctoral Thesis
Language:English
Published: 2014
Subjects:
Physics
Band Alignment
Dielectric
GaN
Interface
PEALD
XPS
Online Access:http://hdl.handle.net/2286/R.I.24827

Internet

http://hdl.handle.net/2286/R.I.24827

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