Improving the Reliability of NAND Flash, Phase-change RAM and Spin-torque Transfer RAM
abstract: Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque tr...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2014
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| Online Access: | http://hdl.handle.net/2286/R.I.24802 |