Improving the Reliability of NAND Flash, Phase-change RAM and Spin-torque Transfer RAM

Improving the Reliability of NAND Flash, Phase-change RAM and Spin-torque Transfer RAM

abstract: Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque tr...

Full description

Bibliographic Details
Other Authors: Yang, Chengen (Author)
Format: Doctoral Thesis
Language:English
Published: 2014
Subjects:
Electrical engineering
error control
Non volatile memory
reliability
Online Access:http://hdl.handle.net/2286/R.I.24802

Internet

http://hdl.handle.net/2286/R.I.24802

Similar Items