Conversion of a Molecular Beam Epitaxy System for the Growth of 6.1 Angstrom Semiconductors
abstract: A dual chamber molecular beam epitaxy (MBE) system was rebuilt for the growth of 6.1 Angstrom II-VI and III-V compound semiconductor materials that are to be used in novel optoelectronic devices that take advantage of the nearly continuous bandgap availability between 0 eV and 3.4 eV. Thes...
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| Format: | Dissertation |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/2286/R.I.14897 |