Accurate RTA-Based Non-Quasi-Static Compact MOSFET Model for RF and Mixed-Signal Simulations

Accurate RTA-Based Non-Quasi-Static Compact MOSFET Model for RF and Mixed-Signal Simulations

abstract: The non-quasi-static (NQS) description of device behavior is useful in fast switching and high frequency circuit applications. Hence, it is necessary to develop a fast and accurate compact NQS model for both large-signal and small-signal simulations. A new relaxation-time-approximation bas...

Full description

Bibliographic Details
Other Authors: Zhu, Zeqin (Author)
Format: Doctoral Thesis
Language:English
Published: 2012
Subjects:
Electrical engineering
bulk charge
compact model
inversion charge
non-quasi-static (NQS)
relaxation time approximation (RTA)
surface potential
Online Access:http://hdl.handle.net/2286/R.I.14552

Internet

http://hdl.handle.net/2286/R.I.14552

Similar Items