Simulation of MOSFETs, BJTs and JFETs At and Near the Pinch-off Region

abstract: Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near t...

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Bibliographic Details
Other Authors: Yang, Xuan (Author)
Format: Dissertation
Language:English
Published: 2011
Subjects:
BJT
Online Access:http://hdl.handle.net/2286/R.I.14322