Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions

Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions

abstract: In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN)...

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Bibliographic Details
Other Authors: Ashraf, Nabil Shovon (Author)
Format: Doctoral Thesis
Language:English
Published: 2011
Subjects:
Electrical engineering
Ensemble Monte Carlo simulation
Interface trap
On-current fluctuations
Random dopant fluctuations
Random telegraph noise
Threshold voltage fluctuations
Online Access:http://hdl.handle.net/2286/R.I.14271

Internet

http://hdl.handle.net/2286/R.I.14271

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