A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon transport is considered by coupled electron and phonon Monte Carlo simulations in the transistor region. For regions...
| Main Authors: | , , |
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| Other Authors: | |
| Language: | en |
| Published: |
AMER INST PHYSICS
2017
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| Online Access: | http://hdl.handle.net/10150/624219 http://arizona.openrepository.com/arizona/handle/10150/624219 |