Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temp...

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Bibliographic Details
Main Authors:	Shang, T., Zhan, Q. F., Yang, H. L., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Wu, Y. H., Zhang, S., Li, Run-Wei
Other Authors:	Univ Arizona, Dept Phys
Language:	en
Published:	AMER INST PHYSICS 2016
Online Access:	http://hdl.handle.net/10150/621346 http://arizona.openrepository.com/arizona/handle/10150/621346

Internet

http://hdl.handle.net/10150/621346
http://arizona.openrepository.com/arizona/handle/10150/621346

Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

Internet

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