ACHIEVING HIGHER EFFICIENCY IN VIDEO / TELEMETRY / DIGITAL TRANSMITTERS USING LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (LDMOSFETs)

ACHIEVING HIGHER EFFICIENCY IN VIDEO / TELEMETRY / DIGITAL TRANSMITTERS USING LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (LDMOSFETs)

International Telemetering Conference Proceedings / October 27-30, 1997 / Riviera Hotel and Convention Center, Las Vegas, Nevada === A 10- or 20-Watt, L- or S-band transmitter commonly consumes the majority of the available DC power on a telemetry pack -- often more than all the remaining components...

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Bibliographic Details
Main Author: Lautzenhiser, Lloyd L.
Other Authors: Emhiser Research, Inc.
Language:en_US
Published: International Foundation for Telemetering 1997
Subjects:
Laterally Diffused
LDMOSFET
Gallium Arsenide
GaAsFET
Transmitter
Efficiency
Online Access:http://hdl.handle.net/10150/609691
http://arizona.openrepository.com/arizona/handle/10150/609691

Internet

http://hdl.handle.net/10150/609691
http://arizona.openrepository.com/arizona/handle/10150/609691

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