Etching in silicon-dioxide with a controllable sidewall angle
A selective sloped silicon dioxide etching method has been studied using a temperature controlled diode-type reactive ion etch system with CHCl₃, C₂F₆, H₂ and N₂ gases. The SiO₂ was covered by a polyimide mask with vertical sidewalls and window openings from 1.25-4 microns. Control of the sidewall s...
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| Language: | en_US |
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The University of Arizona.
1988
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| Online Access: | http://hdl.handle.net/10150/276768 |