Lowering the Environmental Impact Of High-κ/Metal Gate Stack Surface Preparation Processes
Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO₂ as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particul...
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| Language: | en |
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The University of Arizona.
2012
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| Online Access: | http://hdl.handle.net/10150/265397 |