SOLID SOURCE CHEMICAL VAPOR DEPOSITION OF REFRACTORY METAL SILICIDES FOR VLSI INTERCONNECTS.
Low resistance gate level interconnects can free the design of VLSI circuits from the R-C time constant limitations currently imposed by poly-silicon based technology. The hotwall low pressure chemical vapor deposition of molybdenum and tungsten silicide from their commercially available hexacarbony...
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| Language: | en |
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The University of Arizona.
1984
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| Online Access: | http://hdl.handle.net/10150/187789 http://arizona.openrepository.com/arizona/handle/10150/187789 |