Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module
This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage....
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| Format: | Others |
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Virginia Tech
2020
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| Online Access: | http://hdl.handle.net/10919/96559 |