Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module

Impact of Device Parametric Tolerances on Current Sharing Behavior of a SiC Half-Bridge Power Module

This paper describes the design, fabrication, and testing of a 1.2 kV, 6.5 mΩ, half-bridge, SiC MOSFET power module to evaluate the impact of parametric device tolerances on electrical and thermal performance. Paralleling power devices increases current handling capability for the same bus voltage....

Full description

Bibliographic Details
Main Author: Watt, Grace R.
Other Authors: Electrical Engineering
Format: Others
Published: Virginia Tech 2020
Subjects:
SiC MOSFET
power module packaging
flexible PCB
current sharing
symmetrical direct bonded copper (DBC) layout
diode-less module
multi-chip module
device parametric tolerances
package parasitics
vertical GaN
Online Access:http://hdl.handle.net/10919/96559

Internet

http://hdl.handle.net/10919/96559

Similar Items