A study of beryllium and beryllium-lithium complexes in single-crystal silicon
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 meV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145 meV level is due to a more complex beryllium configuration than the 191 meV level. When lithium is thermally diffused...
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| Format: | Others |
| Language: | en |
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Virginia Polytechnic Institute and State University
2019
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| Online Access: | http://hdl.handle.net/10919/91027 |