Recombination lifetime analysis of deep levels in silicon
By the addition of selected impurities to silicon it is possible to affect its physical, optical and electrical properties to a remarkable extent. Of great technological importance are the elements of groups III and V which introduce shallow acceptor and donor levels and control the equilibrium ch...
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| Format: | Others |
| Language: | en_US |
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Virginia Polytechnic Institute and State University
2019
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| Online Access: | http://hdl.handle.net/10919/87658 |