Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors

Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal-oxide-semiconductor field-effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage wi...

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Bibliographic Details
Main Author: Zhu, Yan
Other Authors: Electrical and Computer Engineering
Format: Others
Published: Virginia Tech 2014
Subjects:
Tunnel field-effect-transistor
mixed As/Sb and Ge heterostructures
molecular beam epitaxy
heterointerface engineering
high temperature reliability analysis
structure and device characterization
Online Access:http://hdl.handle.net/10919/47791

Internet

http://hdl.handle.net/10919/47791

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