On the feasibility and application of optical p to n inversion
The feasibility of achieving carrier inversion of a properly doped crystal via optical excitation is studied. This process involves a host substrate doped with deep donors for n-type light characteristic and compensated by a shallow acceptor for p-type characteristic in the dark. This substrate is a...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
Virginia Tech
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10919/45719 http://scholar.lib.vt.edu/theses/available/etd-11152013-040240/ |