Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices

To support the study of potential utilization of the emerging silicon carbide (SiC) devices, two SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A SiC MOSFET by CREE, have been investigated systematically in this thesis. The static and switching characteristics...

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Bibliographic Details
Main Author: Chen, Zheng
Other Authors: Electrical and Computer Engineering
Format: Others
Published: Virginia Tech 2014
Subjects:
SiC MOSFET
SiC JFET
High switching speed
Parasitic impedances
Parametric study
Modeling
Characterization
Online Access:http://hdl.handle.net/10919/30778
http://scholar.lib.vt.edu/theses/available/etd-01012010-163354/

Internet

http://hdl.handle.net/10919/30778
http://scholar.lib.vt.edu/theses/available/etd-01012010-163354/

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