Process-Induced Degradation during the Integration of Pb(Zr/x Ti/1-x)O3 Ferroelectric Capacitors
Three types of major process-induced damage which hampers the realization of FRAM (ferroelectric random access memory) device are investigated; dry etching induced damage, hydrogen-induced degradation, and stress effect. Since ferroelectric capacitors utilize the movement of body-centered atoms in...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Published: |
Virginia Tech
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10919/29042 http://scholar.lib.vt.edu/theses/available/etd-092099-110827/ |