Design and Development of High Density High Temperature Power Module with Cooling System
In recent years, the SiC power semiconductor has emerged as an attractive alternative that pushes the limitations of junction temperature, power rating, and switching frequency of Si devices. These advanced properties will lead converters to higher power density. However, the reliability of the SiC...
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/27766 http://scholar.lib.vt.edu/theses/available/etd-05172010-170211/ |