Single Event Upset Mechanisms for Low - Energy - Deposition Events in SiGe HBTs
Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are a new candidate technology for space applications due to their superior performance to traditional bipolar transistors and tolerance of total ionizing dose (TID) and displacement effects from space radiation. However, SiGe HBTS a...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2007
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-12072007-180707/ |