Ultrafast relaxation dynamics and optical properties of GaAs and GaAs-based heterostructures
Three previously unreported photo-carrier relaxation pathways are presented and discussed in GaAs-based systems. In bulk GaAs, a transient bleach of the spin-split exciton transition 1s->2p is reported following photo-excitation at low temperatures and is likely caused by final state blocking of...
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Format: | Others |
Language: | en |
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VANDERBILT
2014
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Online Access: | http://etd.library.vanderbilt.edu/available/etd-11172014-113623/ |