Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs
Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to excellent high-power as well as high-frequency performance. Even though the performance figures are outstanding, GaN-base...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2015
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ |