MEASUREMENT AND ANALYSIS OF SINGLE EVENT INDUCED CROSSTALK IN NANOSCALE CMOS TECHNOLOGIES
The constant race for increasing the chip density in semiconductor integrated circuits has not only decreased the minimum device feature size but also the minimum amount of charge required to represent a HIGH node voltage. In the radiation domain, this translates into reduced charge requirements for...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2008
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-08202008-122228/ |