Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs
In recent years, GaN-based high-electron-mobility-transistors (HEMT) have demonstrated excellent high power and high frequency performance compared with counterparts based on other materials. Although AlGaN/GaN HEMTs are of great interest owing to the large band gap of GaN (3.4 eV), high breakdown f...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2016
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07262016-182142/ |