Single Event Mechanisms in 90 nm Triple-well CMOS Devices
Triple-well NMOSFETs collect more charge as compared to dual-well NMOSFETs. Single event charge collection mechanisms in 90 nm triple-well NMOS devices are explained and compared with those of dual-well devices. The primary factors affecting the single event pulse width in triple-well NMOSFETs are t...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2008
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07252008-100559/ |