PATTERN IDENTIFICATION OF MULTIPLE CELL UPSETS IN STATIC RANDOM ACCESS MEMORIES TO RELATE EXPERIMENTAL TEST RESULTS TO SINGLE EVENT UPSET MECHANISMS
Multiple cell upsets (MCUs) were first observed in static random access memory (SRAM) in the 1980s. As microelectronics technology scaled, the number of cells affected by an ion strike increased. In order to assess test data, the MCU patterns first need to be associated to mechanisms. This research...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2008
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07232008-142339/ |