Characterization of the Two-Photon Absorption Carrier Generation Region in Silicon Diodes
Two-photon absorption (TPA) has become an important tool for understanding the mechanisms of single-event effects (SEE) in microelectronics. Very little experimental work has been reported that describes the physical structure of the charge cloud centered on the focal plane where TPA carrier generat...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
VANDERBILT
2011
|
| Subjects: | |
| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07222011-143800/ |