Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies
Single event transients (SET) have become increasingly important to characterize since operating frequencies have surpassed 100 MHz. A common way to characterize SETs for a specific technology is to measure the range of SET pulse widths that are generated from the heavy-ion irradiation of a chain of...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2014
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-05132014-085901/ |