RELIABILITY AND IRRADIATION EFFECTS OF 4H-SiC MOS DEVICES
Bias-temperature-instabilities (BTIs) and total ionizing dose effects are investigated for 4H-SiC MOS devices. Low frequency noise measurements are employed to help understand the nature of the defects that affect the reliability and radiation response of SiC MOS devices. Threshold voltage shifts du...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2013
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-04152013-101211/ |