THE EFFECT OF SHALLOW TRENCH ISOLATION (STI) TOPOLOGY, SIDEWALL DOPING AND LAYOUT-RELATED STRESS ON RADIATION-INDUCED LEAKAGE CURRENT
Scaling of gate oxides in bulk complementary metaloxidesemiconductor (CMOS) devices to thinner dimensions has reduced the significance of threshold-voltage shifts due to total-ionizing dose (TID) radiation-induced charge buildup in the thin oxides. As a result, the dominant TID effect in most CMOS t...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
VANDERBILT
2010
|
| Subjects: | |
| Online Access: | http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ |