TOTAL IONIZING DOSE RADIATION EFFECTS AND NEGATIVE BIAS TEMPERATURE INSTABILTIY ON SiGe pMOS DEVICES
The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation in TID response. This is attributed to the additional contributions of radiation-induced holes generated in the...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2014
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ |