SINGLE-EVENT CHARGE COLLECTION AND UPSET IN 65-NM AND 40-NM DUAL- AND TRIPLE-WELL BULK CMOS SRAMS
CMOS technologies can be either dual-well or triple-well. Triple-well technology has several advantages compared to dual-well technology in terms of electrical performance. Differences in the ion-induced single-event response between these two technology options, however, are not well understood. Th...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2012
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-03252012-195135/ |