Chemical Vapor Deposition and Characterization of Zirconia Films For High-k Dielectric Applications
Due to the aggressive dimensional scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs), direct tunneling current across the SiO2 gate dielectric layer has become a significant problem. High-k dielectric materials, such as ZrO2, HfO2, are expected to replace SiO2 as the gate dielec...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2005
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-03212005-093058/ |