Self-aligned graphene field effect transistors with surface transfer doped source/drain access regions
Since its discovery in 2004, graphene has been widely touted as a potential replacement for silicon in the next generation of electronic circuits owing to its exceptionally high carrier mobilities and its ultra-thin body. Graphene field effect transistors (GFETs) show promising potential for use i...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | English |
| Published: |
2012
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/2152/ETD-UT-2012-05-5788 |