Dopant behavior in complex semiconductor systems
As the size of modern transistors is continuously scaled down, challenges rise in almost every component of a silicon device. Formation of ultra shallow junction (USJ) with high activation level is particularly important for suppressing short channel effects. However, the formation of low resistance...
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| Format: | Others |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/2152/7852 |